Datasheet4U Logo Datasheet4U.com

08N50E - FMP08N50E

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Op

Features

  • Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
08N60 N-Channel MOSFET SamHop Microelectronics
08N80C3 SPP08N80C3 Infineon Technologies
08NM65-V N-CHANNEL MOSFET UTC

Other Datasheets by Fuji Electric

Part Number Description

Full PDF Text Transcription

Click to expand full text
FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.
Published: |