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2SK3264-01MR - Power MOSFET

Features

  • High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof FUJI POWER MOS-FET TO-220F15 2.54.

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www.DataSheet4U.com 2SK3264-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof FUJI POWER MOS-FET TO-220F15 2.54 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source Equivalent circuit schematic Drain(D) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 800 ±7 ±28 ±35 378.3 60 +150 -55 to +150 Unit V A A V mJ W °C °C Gate(G) Source(S) *1 L=14.
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