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MW7IC930NBR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MW7IC930NBR1 datasheet PDF. This datasheet also covers the MW7IC930GNR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

Description

47 pF Chip Capacitors 10 nF, 50 V Chip Cap

Features

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  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (2) Integrated ESD Protection 225°C Capable Plastic Package GND NC RoHS Compliant NC In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. V GND V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW7IC930GNR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation. Driver Application — 900 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency (1) 920 MHz 940 MHz 960 MHz Gps (dB) 36.6 36.8 36.6 PAE (%) 16.1 16.7 17.3 ACPR (dBc) - 48.0 - 48.7 - 48.
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