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MW7IC915NT1 - RF LDMOS Wideband Integrated Power Amplifier

Description

1.8 pF Chip Capacitor 0.8 pF Chip Capacitors 6.2 pF Chip Capacitor 3.3 pF Chip Capacitor 47 pF Chip Capacitors 1 μF Chip Capacitors 0.01 μF Chip Capacitors 4.7 μF Chip Capacitors 10 μF, 50 V Chip Capacitors 100 μF, 50 V Electrolytic Capacitors 2 kΩ, 1/4 W Resistors Part Number ATC100B1R8BT500XT ATC1

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. 1. Refer to AN1977, Quiescent Current Thermal Trackin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev. 0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 865 MHz 880 MHz 895 MHz Gps (dB) 37.9 38.0 37.8 PAE (%) 17.1 17.4 17.5 ACPR (dBc) - 50.4 - 50.6 - 51.3 MW7IC915NT1 728 - 960 MHz, 1.6 W AVG.
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