MW4IC2230NBR1 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application - Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 m A, IDQ2 = 350 m A, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 d B @ 0.01% Probability on CCDF. Power Gain - 31 d B Drain Efficiency - 15% ACPR @ 5 MHz = - 45 d Bc in 3.84 MHz Bandwidth Driver Application - Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 m A, IDQ2 = 350 m A, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 d B @ 0.01% Probability on CCDF. Power Gain - 31.5 d B ACPR @ 5 MHz = - 53.5 d Bc in 3.84 MHz Bandwidth - Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power - Stable into a 3:1 VSWR. All Spurs Below - 60 d Bc @ 10 m W to 5 W CW Pout. Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) - Integrated Quiescent Current Temperature pensation with Enable/Disable Function - On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) - Integrated ESD...