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MW4IC2230NBR1 Datasheet Rf Ldmos Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Drain Efficiency — 15% ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth Driver Application • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 31.5 dB ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW Pout.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • On - Chip Current Mirror gm Reference FET for Self Biasing.

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More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MW4IC2230GNBR1 RF LDMOS Wideband Integrated Power Amplifiers
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