MW4IC2230NBR1 Overview
Freescale Semiconductor Technical Data Document Number: 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure.
MW4IC2230NBR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function
- Chip Current Mirror gm Reference FET for Self Biasing Application (1)
- Integrated ESD Protection
- 200°C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230NBR1 Applications
- stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: