MRF8S9170NR3 transistor equivalent, rf power field effect transistor.
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Paramete.
with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulati.
Short Ferrite Bead 39 pF Chip Capacitors 2.0 pF Chip Capacitor 3.3 pF Chip Capacitors 100 μF, 50 V Electrolytic Capacitor 3.3. μF, 100 V Chip Capacitor 0.1 μF Chip Capacitors 6.8 pF Chip Capacitors 6.2 pF Chip Capacitors 5.6 pF Chip Capacitors 4.7 pF.
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