MRF8S21200HSR6 transistors equivalent, rf power field effect transistors.
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Paramete.
with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modula.
8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 0.6 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 0.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 22 Ω, 1/4 W Chip Resistor 12 Ω, 1/4 W Chip Resistors .
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