MRF8S19140HSR3 transistors equivalent, rf power field effect transistors.
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modula.
10 pF Chip Capacitors 0.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 6.8 μF, 50 V Chip Capacitor 47 μF, 16 V Tantalum Capacitor .01 μF, 100 V Chip Capacitors .56 μF, 50 V Chip Capacitors 5.1 Ω, 1/8 W Chip Resis.
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