MRF5S9101NR1 Overview
Freescale Semiconductor Technical Data Document Number: 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
MRF5S9101NR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 200°C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
- 960 MHz, 100 W, 26 V GSM/GSM EDGE LATERAL N