MRF5S19060NR1 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* 200°C Capabl.
with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for lar.
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