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MRF21010LSR1 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF21010LSR1, a member of the MRF21010LR1 RF Power Field Effect Transistors family.

Features

  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 3.

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Datasheet preview – MRF21010LSR1

Datasheet Details

Part number MRF21010LSR1
Manufacturer Freescale Semiconductor
File Size 428.58 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF21010LSR1 Datasheet
Additional preview pages of the MRF21010LSR1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical W--CDMA Performance: --45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.
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