MRF21010LSR1
MRF21010LSR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF21010LR1 comparator family.
- Part of the MRF21010LR1 comparator family.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
- Typical W--CDMA Performance: --45 d Bc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power
- 2.1 Watts Power Gain
- 13.5 d B Efficiency
- 21%
- Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz, 10 Watts CW Output Power
Features
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
- Ro HS pliant.
- In Tape and Reel. R1 Suffix = 500 Units per...
