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MRF21010LSR1 - RF Power Field Effect Transistors

Product Overview

Freescale Semiconductor

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MRF21010LSR1 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Datasheet preview – MRF21010LSR1

Datasheet Details

Part number	MRF21010LSR1
Manufacturer	Freescale Semiconductor
File Size	428.58 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF21010LSR1 Datasheet
Note	This datasheet PDF includes multiple part numbers: MRF21010LSR1, MRF21010LR1. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF21010LSR1 datasheet.

Product details

Features

High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large--Signal Impedance Parameters.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 3.

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Published: May 10, 2018 |