MRF19125R3 transistors equivalent, rf power field effect transistors.
* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion.
with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2.
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