MRF1570NT1 - RF Power Field Effect Transistors

Freescale Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF1570NT1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	653.70 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF1570NT1 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MRF1570N Rev.

9, 6/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment.

Key Features

Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Broadband - Full Power Across the Band: 135 - 175 MHz www. DataSheet4U. com 400 - 470 MHz.
Broadband Demonstration Amplifier Information Available Upon Request.
200_C Capable Plastic Package.
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1570NT1 MRF1.

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