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Freescale Semiconductor Electronic Components Datasheet

MRF1570FNT1 Datasheet

RF Power Field Effect Transistors

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 11.5 dB
Efficiency — 60%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Features
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
www.DataShBereota4dUb.caonmd - Full
Power
Across
the
Band:
135 - 175
400 - 470
MHz
MHz
Broadband Demonstration Amplifier Information Available Upon Request
200_C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF1570N
Rev. 9, 6/2008
MRF1570NT1
MRF1570FNT1
470 MHz, 70 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366 - 05, STYLE 1
TO - 272 - 8 WRAP
PLASTIC
MRF1570NT1
CASE 1366A - 03, STYLE 1
TO - 272 - 8
PLASTIC
MRF1570FNT1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
+0.5, +40
± 20
165
0.5
Vdc
Vdc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg
- 65 to +150
°C
TJ 200 °C
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
RθJC
0.29 °C/W
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1 260 °C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
1


Freescale Semiconductor Electronic Components Datasheet

MRF1570FNT1 Datasheet

RF Power Field Effect Transistors

No Preview Available !

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 0.8 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
www.DRaetvaeSrhseeeTtr4aUns.cfeormCapacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
RF Characteristics (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA)
f = 470 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA)
f = 470 MHz
Symbol
IDSS
Min Typ Max
——
1
Unit
μA
VGS(th)
VDS(on)
1—
——
3
1
Vdc
Vdc
Ciss
Coss
Crss
— — 500
— — 250
— — 35
pF
pF
pF
Gps
— 11.5 —
dB
η
— 60 —
%
MRF1570NT1 MRF1570FNT1
2
RF Device Data
Freescale Semiconductor


Part Number MRF1570FNT1
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 23 Pages
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