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MD7IC2050GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MD7IC2050GNR1 datasheet PDF. This datasheet also covers the MD7IC2050NR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MD7IC2050NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev.

0, 8/2009 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz.

This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Production Tested in a Symmetrical Doherty Configuration.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Complian.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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