TK20P04M1 mos equivalent, mosfets silicon n-channel mos.
(1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 3.7 nC (typ.) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V) Low leakage current: IDS.
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* DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) (4) (5) High-speed switching Low gate.
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