AOTF15S65 transistor equivalent, power transistor.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 60A 0.29Ω 17.2nC 3.6µJ
D
G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter AOT15S65/AO.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly int.
The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOS
TM
high voltage process that is designed to deliver high levels of
performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along wi.
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