AOD3N50 mosfet equivalent, n-channel mosfet.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 2.8A < 3Ω
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Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Ga.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly i.
The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guarantee.
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