VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 500V@150℃ 2.6A < 3.1Ω TO252 DPAK D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly i.

The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC- DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanch.

AOD3N50

AOD3N60

AOD3N80

AOD32334C

AOD360A70

AOD380A60

AOD3C60

AOD3T40P

AOD11S60

AOD1N60

AOD200

AOD206

AOD208

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