Datasheet Details
| Part number | AO4409 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 419.92 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 AO4409 Datasheet
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General Description
The AO4409 uses advanced trench technology to provide excellent RDS(ON) , and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Key Features
- VDS (V) = -30V ID = -15 A Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -15 -12.8 -80 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Charact.