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AO4408L Datasheet

N-Channel MOSFET

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AO4408, AO4408L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4408 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and fast
switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
AO4408L(Green Product) is offered in a lead-free package.
Features
VDS (V) = 30V
ID = 12A
RDS(ON) < 13m(VGS = 10V)
RDS(ON) < 16m(VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current B,E
Repetitive Avalanche Energy B,E L=0.1mH
ID
IDM
IAV
EAV
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
12
10
80
30
100
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
23
48
12
Max
40
65
16
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/5
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Freescale Semiconductor Electronic Components Datasheet

AO4408L Datasheet

N-Channel MOSFET

No Preview Available !

AO4408, AO4408L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=12A
VGS=4.5V, ID=10A
Forward Transconductance
VDS=5V, ID=10A
Diode Forward Voltage
IS=10A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.2,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
Min
30
1
40
30
Typ
0.003
1.5
10.5
16
13
48
0.76
1020
320
80
0.25
10.3
2.1
3.9
3.9
3
19.2
2.6
26
18
Max
1
5
100
2.5
14
21
16.5
1
4.5
1200
0.5
12.5
5.5
6
30
5
32
32
Units
V
µA
nA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
100
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
2/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Part Number AO4408L
Description N-Channel MOSFET
Maker Freescale
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AO4408L Datasheet PDF






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