AO4408L - N-Channel MOSFET

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Datasheet Details

The AO4408 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and fast switching.

VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Avalanche Current B,E B,E Maximum 30 ±12 12 10 80 30 100 3 2.1 -55 to 150 Units V V A A mJ W °C VGS TA=25°C TA=70°C ID IDM IAV L=0.1mH EAV PD TJ, TSTG TA=25°C Repetitive Avalanche Energy Power Dissipation TA=70°C Ju.

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Published: Dec 1, 2013 |