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AO4407A Datasheet

P-Channel MOSFET

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AO4407A
30V P-Channel MOSFET
General Description
The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
VDS = -30V
ID = -12A
(VGS = -20V)
RDS(ON) < 11m(VGS = -20V)
RDS(ON) < 13m(VGS = -10V)
RDS(ON) < 17m(VGS = -6V)
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current G
Repetitive avalanche energy L=0.3mH G
ID
IDM
IAR
EAR
Power Dissipation A
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±25
-12
-10
-60
-26
101
3.1
2.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
32
60
17
Max
40
75
24
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/5
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Freescale Semiconductor Electronic Components Datasheet

AO4407A Datasheet

P-Channel MOSFET

No Preview Available !

AO4407A
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID = -250µA, VGS = 0V
IDSS Zero Gate Voltage Drain Current
VDS = -30V, VGS = 0V
TJ = 55°C
IGSS Gate-Body leakage current
VDS = 0V, VGS = ±25V
VGS(th) Gate Threshold Voltage
VDS = VGS ID = -250µA
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
VGS = -20V, ID = -12A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS = -10V, ID = -12A
VGS = -6V, ID = -10A
gFS Forward Transconductance
VDS = -5V, ID = -10A
VSD Diode Forward Voltage
IS = -1A,VGS = 0V
IS Maximum Body-Diode Continuous Current
-30
-1.7
-60
-1
-5
±100
-2.3 -3
8.5
11.5
10
12.7
21
-0.7
11
15
13
17
-1
-3
V
µA
nA
V
A
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2060
370
295
2.4
2600
3.6
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.25,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
30 39 nC
4.6 nC
10 nC
11 ns
9.4 ns
24 ns
12 ns
30 40 ns
22 nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev10: Nov 2010
2/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Part Number AO4407A
Description P-Channel MOSFET
Maker Freescale
PDF Download

AO4407A Datasheet PDF






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