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AO4404B Datasheet

N-Channel MOSFET

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AO4404B
30V N-Channel MOSFET
General Description
The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC
conversion.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 2.5V)
30V
8.5A
< 24m
< 30m
< 48m
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
8.5
7.1
60
14
10
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AO4404B Datasheet

N-Channel MOSFET

No Preview Available !

AO4404B
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8.5A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=8.5A
VGS=2.5V, ID=5A
Forward Transconductance
VDS=5V, ID=8.5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
0.65
60
1.05
17.7
28
19
24
37
0.7
1
5
100
1.45
24
34
30
48
1
4
V
µA
nA
V
A
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
630
75
50
1.5 3 4.5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
6 7 nC
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=8.5A
1.3 nC
Qgd Gate Drain Charge
1.8 nC
tD(on)
Turn-On DelayTime
3 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8, 2.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
25 ns
tf Turn-Off Fall Time
4 ns
trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs
8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs
2.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Part Number AO4404B
Description N-Channel MOSFET
Maker Freescale
PDF Download

AO4404B Datasheet PDF






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