20V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th) Gate Threshold Voltage
0.5 1 1.6 V
On state drain current
RDS(ON) Static Drain-Source On-Resistance
5.5 7 mΩ
gFS Forward Transconductance
VSD Diode Forward Voltage
IS Maximum Body-Diode Continuous Current
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Qg(4.5V) Total Gate Charge
28 36 43 nC
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=20A
7 9 11 nC
Qgd Gate Drain Charge
7 12 17 nC
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=0.5Ω, 8 ns
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
13 17 20 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
29 36 43 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.Maximum avalanche current limited by tester capability.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
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