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AO4402 Datasheet

N-Channel MOSFET

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AO4402
20V N-Channel MOSFET
General Description
The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=2.5V)
20V
20A
< 5.5m
< 7m
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
20
16
140
57
162
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AO4402 Datasheet

N-Channel MOSFET

No Preview Available !

AO4402
20V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.5 1 1.6 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
140
A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
TJ=125°C
4.6 5.5
m
5.8 7
VGS=2.5V, ID=18A
5.5 7 m
gFS Forward Transconductance
VDS=5V, ID=20A
105 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.6 1
V
IS Maximum Body-Diode Continuous Current
4A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3080
520
350
0.6
3860
740
580
1.4
4630
960
810
2.1
pF
pF
pF
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
28 36 43 nC
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=20A
7 9 11 nC
Qgd Gate Drain Charge
7 12 17 nC
tD(on)
Turn-On DelayTime
7 ns
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=0.5, 8 ns
tD(off)
Turn-Off DelayTime
RGEN=3
70 ns
tf Turn-Off Fall Time
18 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
13 17 20 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
29 36 43 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.Maximum avalanche current limited by tester capability.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
2/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Part Number AO4402
Description N-Channel MOSFET
Maker Freescale
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AO4402 Datasheet PDF






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