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IRL2203NS - Power MOSFET

Download the IRL2203NS datasheet PDF. This datasheet also covers the IRL2203NL variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • ay Inductance.
  • Ground Plane.
  • Low Leakage Inductance Current Transformer ‚ -.
  • +  RG VGS.
  • dv/dt controlled by RG.
  • ISD controlled by Duty Factor "D".
  • D. U. T. - Device Under Test + VDD.
  • Reverse Polarity of D. U. T for P-Channel http://www. DataSheet4U. net/ Driver Gate Drive P. W. Period D= P. W. Period [VGS=10V ].
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recov.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL2203NL_FreesCale.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRL2203NS Power MOSFET International Rectifier
IRL2203NS N-Channel MOSFET INCHANGE
IRL2203NSPbF Power MOSFET International Rectifier
IRL2203N Power MOSFET International Rectifier
IRL2203N N-Channel MOSFET INCHANGE

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
IRL2203NL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRL2203NS/L l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ G S ID = 116A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.