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FS8205 - Dual N-Channel Power MOSFET

Datasheet Summary

Description

Package Type Quantity/Reel SOT23-6 package version SOT23-6 3,000 SOT23-6 Top View 1 2 3 4 G1 G2 5 6 D12 Parameter Rating Units Drain-Source Voltage Gate-Source Voltage 20 V ±12 6 5 V Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 A A 25 A Total Power Dis

Features

  • Low on-resistance RDS(ON) = 25 mΩ MAX. (VGS = 4.5V, ID = 4A) RDS(ON) = 35 mΩ MAX. (VGS = 2.5V, ID = 3A) 2.

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Datasheet Details

Part number FS8205
Manufacturer Fortune Semiconductor
File Size 726.48 KB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet FS8205 Datasheet
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Full PDF Text Transcription

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REV. 1.0 FS8205-DS-10_EN AUG 2009 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET Fo F P r R ro SC ef pe ’ er rti en es ce O nl y FS8205 Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874 www.ic-fortune.com This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product Rev. 1.0 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y 2/6 FS8205 1. 1.1 1.1.1 1.1.2 Features Low on-resistance RDS(ON) = 25 mΩ MAX.
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