FMD5N50E5
Description
： FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast body diode eliminates the need for external diode in ZVS applications
- Lower Gate charge results in simpler drive requirements
- Higher Gate voltage threshold offers improved noise immunity
