Chip Low VF Schottky Barrier Rectifier
SL22-M THRU SL24-M
Formosa MS
2.0A Low VF Surface Mount
Schottky Barrier Rectifiers - 20V-40V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Tiny plastic SMD package.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free parts, ex. SL22-Μ-H
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123 / MINI SMA
• Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.018 gram
Package outline
SOD-123
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
0.075(1.9)
0.060(1.5)
0.028(0.7) Typ.
0.067(1.7)
0.051(1.3)
0.028(0.7) Typ.
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX.
Forward rectified current
See Fig.2
IO 2.0
UNIT
A
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
IFSM
50 A
Reverse current
Diode junction capacitance
Storage temperature
SYMBOLS
SL22-M
SL23-M
SL24-M
V
*
RRM
1
(V)
20
30
40
V
*
RMS
2
(V)
14
21
28
VR = VRRM TJ = 25OC
f=1MHz and applied 4V DC reverse voltage
IR 1.0 mA
CJ
TSTG
160 pF
-65 +175 OC
V
*
R
3
(V)
20
30
40
V
*
F
4
(V)
0.38
0.40
0.40
Operating
temperature
TJ, (OC)
-55 to +100
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=2.0A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID Issued Date
DS-121657 2008/02/10
Revised Date Revision
2011/03/25
E
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