Chip Low VF Schottky Barrier Rectifier
SL12-S THRU SL14-S
Formosa MS
1.0A Low VF Surface Mount
Schottky Barrier Rectifiers - 20V-40V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.SL12-S-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA-S
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Package outline
SMA-S
0.213(5.4)
0.197(5.0)
0.063(1.6)
0.055(1.4)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.040(1.0) Typ.
0.071(1.8)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX.
Forward rectified current
See Fig.2
IO 1.0
UNIT
A
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
IFSM
30 A
Reverse current
Diode junction capacitance
Storage temperature
SYMBOLS
SL12-S
SL13-S
SL14-S
V
*
RRM
1
(V)
20
30
40
V
RM
*
S
2
(V)
14
21
28
VR = VRRM TJ = 25OC
f=1MHz and applied 4V DC reverse voltage
IR 1.0 mA
CJ
TSTG
130 pF
-65 +175 OC
V
*
R
3
(V)
20
30
40
V
*
F
4
(V)
0.38
0.40
0.40
Operating
temperature
TJ, (OC)
-55 to +100
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID Issued Date
DS-12163L 2009/08/10
Revised Date Revision
2010/03/10 B
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