Chip Low Leakage Schottky Barrier Rectifier
Formosa MS
KLFM120-HST THRU KLFM140-HST
1.0A Surface Mount Low Leakage
Schottky Barrier Rectifiers - 20V - 40V
Package outline
Features
• Low profile surface mounted application in order to
optimize board space.
• Extra low reverse leakage current
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free parts, ex. KLFM120-HST-Η.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic,SMA-HST
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.037 gram
0.069(1.75)
0.045(1.15)
SMA-HST
0.213(5.4)
0.197(5.0)
0.018(0.45) Typ.
0.111(2.8)
0.095(2.4)
0.079(2.00)
0.063(1.60)
0.140(3.55)Typ.
0.091 (2.3)
0.075 (1.9)
0.041(1.05)
0.037(0.95)
0.040 (1.0) Typ.
0.030 (0.75)
0.022 (0.55)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX.
Forward rectified current
See Fig.1
IO 1.0
UNIT
A
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
IFSM
30 A
Reverse current
Diode capacitance
Storage temperature
VR = V TRRM, J = 25OC
f=1MHz and applied 10V DC reverse voltage
IR
CJ
TSTG
50
32
μA
pF
-65 +175 OC
SYMBOLS
KLFM120-HST
V
*
RRM
1
(V)
20
KLFM130-HST 30
KLFM140-HST 40
V
RM
*
S
2
(V)
14
21
28
V
*
R
3
(V)
20
30
40
V
*
F
4
Operating
temperature
(V) TJ, (OC)
0.50 -55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage @IR=100μA
*4 Maximum forward voltage@IF=1.0A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID Issued Date
DS-12164T 2013/12/17
Revised Date Revision
-A
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