900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Formosa MS

FM180-S Datasheet Preview

FM180-S Datasheet

Chip Schottky Barrier Diodes

No Preview Available !

Chip Schottky Barrier Diodes
FM120-S THRU FM1100-S
Formosa MS
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
SMA-S
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.063(1.6)
0.055(1.4)
0.106(2.7)
0.091(2.3)
0.181(4.6)
0.165(4.2)
0.040(1.0) Typ.
0.071(1.8)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
www.DaFtaorSwharedetr4eUct.cifoimed current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Reverse current
Thermal resistance
VR = VRRM TA = 25oC
VR = VRRM TA = 125oC
Junction to ambient
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
Storage temperature
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
88
120
MAX.
1.0
UNIT
A
30 A
0.5
10
+150
mA
mA
oC / w
pF
oC
SYMBOLS
FM120-S
FM130-S
FM140-S
FM150-S
FM160-S
FM180-S
FM1100-S
MARKING
CODE
SS12
SS13
SS14
SS15
SS16
SS18
S110
VRRM *1
(V)
20
30
40
50
60
80
100
VRMS *2
(V)
14
21
28
35
42
56
70
VR *3
(V)
20
30
40
50
60
80
100
VF *4
(V)
0.50
0.70
0.85
Operating
temperature
(oC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage




Formosa MS

FM180-S Datasheet Preview

FM180-S Datasheet

Chip Schottky Barrier Diodes

No Preview Available !

RATING AND CHARACTERISTIC CURVES (FM120-S THRU FM1100-S)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
24
18
Tj=25 C
8.3ms Single Half
12 Sine Wave
JEDEC method
6
0
1
www.DataSheet4U.com
5 10
NUMBER OF CYCLES AT 60Hz
50 100
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
.01
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
50
10
3.0
1.0
0.1
FM180-S~FM1100-S
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.01
.1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
Tj=75 C
.1
Tj=25 C
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)


Part Number FM180-S
Description Chip Schottky Barrier Diodes
Maker Formosa MS
PDF Download

FM180-S Datasheet PDF






Similar Datasheet

1 FM180-M Silicon epitaxial planer type
Formosa MS
2 FM180-MH Chip Schottky Barrier Diodes
Formosa MS
3 FM180-MS SMD Schottky Barrier Rectifier
Formosa MS
4 FM180-N Chip Schottky Barrier Rectifier
PACELEADER INDUSTRIAL
5 FM180-S Chip Schottky Barrier Diodes
Formosa MS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy