FTK1N60I, FTK1N60P Datasheet - First Silicon

FTK1N60I N-CHANNEL MOSFET

The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM .

FTK1N60I Features

* RDS(ON) = 9 .6Ω@VGS =10V

* Ultra Low gate charge (typical 5.0nC)

* Low reverse transfer capacitance (CRSS = typical 3.5 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness SYMBOL 2 Drain Power MOSFET I: 1 D: 1 TO -

FTK1N60P-FirstSilicon.pdf

FTK1N60I Datasheet Preview — This datasheet PDF includes multiple part numbers: FTK1N60I, FTK1N60P. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

FTK1N60I, FTK1N60P

Manufacturer:

First Silicon

File Size:

215.55 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: FTK1N60I, FTK1N60P.
Please refer to the document for exact specifications by model.

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FTK1N60I FTK1N60P N-CHANNEL MOSFET First Silicon

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