900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






FineSPN

FGM75D06V1 Datasheet Preview

FGM75D06V1 Datasheet

HALF-BRIDGE IGBT

No Preview Available !

FineSPN
Fine Silicon Power Networks
“HALF-BRIDGE” IGBT
Preliminary
Features
Applications
10μs short circuit capability
AC & DC motor controls
Low turn-off losses
General purpose inverters
Short tail current
Optimized for high current inverter
stages (AC TIG welding machines)
Servo controls
UPS
Robotics
www.DataSheet4U.com
Absolute Maximum Ratings @ Tc = 25(per leg)
Package : V1
FGM75D06V1
VCES = 600V
Ic = 75A
VCE(ON) typ. = 1.9V
@ Ic = 75A
Symbol
Parameter
Test condition
Rating
Unit
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC Continuous Collector Current
ICM Pulsed collector current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
Viso Isolation Voltage test
Tj Junction Temperature
Tstg Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 250μA
TC = 70(25)
TC = 70(25)
TC = 70(25)
TC = 100
AC 1 minute
600
± 20
75(100)
150(200)
70(90)
200
10
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
V
V
A
A
A
A
μs
V
g
Nm
Nm
Electrical Characteristics @ Tj = 25(unless otherwise specified)
Symbol
Parameter
V(BR)CES
VCE(ON)
VGE(th)
ICES
IGES
VFM
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Min
600
-
3.0
-
-
-
Typ
-
1.9
4.5
-
-
1.50
Max Unit
Test condition
-
2.3
6.0
500
±100
1.8
VGE = 0V, IC = 250μA
V IC = 75A, VGE = 15V
VCE = VGE, IC = 250μA
μA VGE = 0V, VCE = 600V
nA VCE = 0V, VGE = ±20V
V IC = 75A
-1-




FineSPN

FGM75D06V1 Datasheet Preview

FGM75D06V1 Datasheet

HALF-BRIDGE IGBT

No Preview Available !

FineSPN
Fine Silicon Power Networks
Preliminary
FGM75D06V1
Switching Characteristics @ Tj = 25(unless otherwise specified)
Symbol
Parameter
Cies Input capacitance
Coss Output capacitance
Cres Reverse transfer capacitance
Min Typ Max Unit
Test condition
- 6900 -
- 730 -
- 190 -
VCE = 30V, VGE = 0V
pF
f = 1.0MHz
td(on)
Turn-on delay time
tr Rise time
td(off)
Turn-off delay time
tf Fall time
www.DataSheeIrtr4U.comDiode Peak Reverse Recovery current
trr Diode Reverse Recovery time
-
-
-
-
-
-
82 -
107 -
282 423
97 146
13 20
140 210
Tj = 25, VCC = 480V
ns IC = 60A, VGE = 15V
RG = 5.0
A Tj = 125, VR = 200V
ns IF = 60A
Thermal Characteristics
Symbol
RΘJC
RΘJC
RΘCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module)
Junction-to-Case (Diode Part, Per 1/2 Module)
Case-to-Heat Sink (Conductive grease applied)
Min
Typ
Max
Unit
- - 0.4
- - 0.9 /W
- 0.05 -
-2-


Part Number FGM75D06V1
Description HALF-BRIDGE IGBT
Maker FineSPN
Total Page 6 Pages
PDF Download

FGM75D06V1 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FGM75D06V1 HALF-BRIDGE IGBT
FineSPN





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy