LPD200P70 Datasheet, Filtronic Compound Semiconductors

* 20 dBm Output Power at 1-dB Compression at 18 GHz
* 9.5 dB Power Gain at 18 GHz
* 16 dB Small Signal Gain at 2 GHz
* 0.8 dB Noise Figure at 2 GHz LPD20.

The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Elect.

AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gat.