Datasheet4U Logo Datasheet4U.com

LP6836P70 - PACKAGED MEDIUM POWER PHEMT

General Description

AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range.

Key Features

  • S.
  • 23 dBm Output Power at 1-dB Compression at 15 GHz.
  • 11.5 dB Power Gain at 15 GHz.
  • 50% Power-Added Efficiency LP6836P70.

📥 Download Datasheet

Datasheet Details

Part number LP6836P70
Manufacturer Filtronic Compound Semiconductors
File Size 59.89 KB
Description PACKAGED MEDIUM POWER PHEMT
Datasheet download datasheet LP6836P70 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency LP6836P70 • DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography. Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers.