LP6836P70 Overview
Description
AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography.
Key Features
- 23 dBm Output Power at 1-dB Compression at 15 GHz
- 11.5 dB Power Gain at 15 GHz
- 50% Power-Added Efficiency LP6836P70
