LP6836P100 Datasheet PDF - Filtronic Compound Semiconductors Packaged 0.25W Power PHEMT Specs

LP6836P100 - Packaged 0.25W Power PHEMT

Datasheet Summary

Description

The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate.

Features

LP6836P100 Packaged 0.25W Power PHEMT.
GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN.

Datasheet Details

Part number	LP6836P100
Manufacturer	Filtronic Compound Semiconductors
File Size	23.10 KB
Description	Packaged 0.25W Power PHEMT
Datasheet	LP6836P100 Datasheet
Additional preview pages of the LP6836P100 datasheet.

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Full PDF Text Transcription

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Filtronic Solid State FEATURES LP6836P100 Packaged 0.25W Power PHEMT • • • • • GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN DESCRIPTION AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si3N4 passivation and is available in die form, or P70 packages.

Published: Mar 22, 2005 |