LP6836P100 Datasheet Packaged 0.25W Power PHEMT

Manufacturer: Filtronic Compound Semiconductors

LP6836P100 packaged 0.25w power phemt by Filtronic Compound Semiconductors - Datasheet Preview

Datasheet Details

Part number	LP6836P100
Manufacturer	Filtronic Compound Semiconductors
File Size	23.10 KB
Description	Packaged 0.25W Power PHEMT
Download	LP6836P100 Download (PDF)

General Description

AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate.

The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.

The epitaxial structure and processing have been optimized for reliable high-power applications.

Overview

Filtronic Solid State.

Key Features

LP6836P100 Packaged 0.25W Power PHEMT.
GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN.

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