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LP6836P100

The LP6836P100 is Packaged 0.25W Power PHEMT designed by Filtronic Compound Semiconductors.

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Datasheet preview – LP6836P100

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Part number LP6836P100
Manufacturer Filtronic Compound Semiconductors
File Size 23.10 KB
Description Packaged 0.25W Power PHEMT
Datasheet download datasheet LP6836P100_FiltronicCompoundSemiconductors.pdf
Additional preview pages of the LP6836P100 datasheet.

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Description

AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimized for reliable high-power applications.The LP6836 also

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