FPD750SOT89 phemt equivalent, low noise high linearity packaged phemt.
(1.85GHZ):
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Datasheet 3.0
PACKAGE:
RoHS
25 dBm Output Power (P1dB)
18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output I.
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* Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNA.
The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The double recessed g.
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