FPD750SOT343 phemt equivalent, low noise high linearity packaged phemt.
(1850MHZ):
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* 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC.
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* 802.11a,b,g and WiMax LNAs PCS/Cellular High Linearity LNAs Other types of wireless infrastructure sy.
The www.DataSheet4U.com FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate. The Filtronic 0.25µm process ensures class-leading noise performance. Th.
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