FPD750P100 phemt equivalent, 0.5w packaged power phemt.
* 26.5 dBm Linear Output Power
* 18.5 dB Power Gain at 2 GHz
* 11.5 dB Maximum Stable Gain at 10 GHz
* 36 dBm Output IP3
* 45% Power-Added Efficiency .
The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm.
AND APPLICATIONS
The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offs.
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