FPD750DFN phemt equivalent, low noise high linearity packaged phemt.
(1850MHZ):
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* 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added .
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* Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNA.
The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offse.
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