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FPD3000SOT89 - HIGH LINEARITY PACKAGED PHEMT

General Description

AND APPLICATIONS The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 x 3000 µm Schottky barrier Gate, defined by highresolution stepper-based photolithography.

Key Features

  • c. co. uk/semis -1.0 S22 -0 .6 -2 .0 Swp Min 0.5GHz -5. -4 .0 0 -0. 2 -10.0 -3 . 0 0. 4 7 GHz 3. 0 0 4.

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Datasheet Details

Part number FPD3000SOT89
Manufacturer Filtronic Compound Semiconductors
File Size 422.75 KB
Description HIGH LINEARITY PACKAGED PHEMT
Datasheet download datasheet FPD3000SOT89 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE (1850 MHz) ♦ 30 dBm Output Power (P1dB) ♦ 13 dB Small-Signal Gain (SSG) ♦ 1.3 dB Noise Figure ♦ 45 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD3000SOT89E FPD3000SOT89 • DESCRIPTION AND APPLICATIONS The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 3000 µm Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.