Datasheet Details
| Part number | FPD3000P100 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 212.32 KB |
| Description | 2W PACKAGED POWER PHEMT |
| Datasheet |
 FPD3000P100 Datasheet
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General Description
AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.
Key Features
- S.
- 32.5 dBm Linear Output Power.
- 17 dB Power Gain at 2 GHz.
- 9.5 dB Maximum Stable Gain at 10 GHz.
- 42 dBm Output IP3.
- 45% Power-Added Efficiency at 2 GHz FPD3000P100.