Datasheet4U Logo Datasheet4U.com

FP4050 - 2-WATT POWER PHEMT

Description

The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate.

Features

  • ES.
  • 48 dBm IP3 at 2 GHz.
  • 34 dBm P-1dB at 2 GHz.
  • 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X).

📥 Download Datasheet

Datasheet Details

Part number FP4050
Manufacturer Filtronic Compound Semiconductors
File Size 39.57 KB
Description 2-WATT POWER PHEMT
Datasheet download datasheet FP4050 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FP400F40ADFF1 FAST RECOVERY DIODE MODULE JILIN SINO
FP401 Very High-Speed Switching Applications Sanyo Semicon Device
FP402 Very High-Speed Switching Applicaitons Sanyo Semicon Device
FP40R12KE3 IGBT Eupec
FP40R12KE3 IGBT Infineon

Other Datasheets by Filtronic Compound Semiconductors

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY DATA SHEET FP4050 2-WATT POWER PHEMT • FEATURES ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.
Published: |