FPD6836 phemt equivalent, 0.25w power phemt.
* 25.5 dBm Output Power (P1dB)
* 10 dB Power Gain at 12 GHz
* 16.5 dB Max Stable Gain at 12 GHz
* 12 dB Maximum Stable Gain at 24 GHz
* 50% Power-Add.
ELECTRICAL SPECIFICATIONS1:
LAYOUT:
TYPICAL APPLICATIONS:
* Narrowband and broadband highperformance amplifiers
The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 360 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitic.
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