FP2250QFN phemt equivalent, packaged low noise / high linearity phemt.
* 29 dBm Output Power at 1-dB Compression
* 17 dB Power Gain at 2 GHz
* 1.0 dB Noise Figure at 2 GHz
* 42 dBm Output IP3
* 50% Power-Added Efficiency
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The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide.
AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottk.
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