SSM1N45B - 450V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	SSM1N45B
Manufacturer	Fairchild Semiconductor
File Size	639.22 KB
Description	450V N-Channel MOSFET
Datasheet	SSM1N45B Datasheet
Additional preview pages of the SSM1N45B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V.
Low gate charge ( typical 6.5 nC).
Low Crss ( typical 6.5 pF).
100% avalanche tested.
Improved dv/dt capability.
Gate-Source Voltage ± 50V guaranteed D S G SOT-223 SSM Series G! D !.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - C.

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Published: Apr 1, 2008 |