* 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V
* Low gate charge ( typical 6.5 nC)
* Low Crss ( typical 6.5 pF)
* 100% avalanche tested
* Improved dv/dt ca.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts