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* 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide su.

SSI122

SSI1N50B

SSI1N60A

SSI1N60B

SSI2007

SSI204

SSI2085E-C

SSI20N5E-C

SSI2154

SSI263A

SSI2N60B

SSI2N80A

SSI3139J-C

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