Datasheet4U.com

SSH10N90A - N-CHANNEL POWER MOSFET

Fairchild Semiconductor

📥 Download Datasheet

SSH10N90A Datasheet Preview — Preview of SSH10N90A PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	SSH10N90A
Manufacturer	Fairchild ↗ Semiconductor
File Size	245.63 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	SSH10N90A_FairchildSemiconductor.pdf

SSH10N90A Product details

Features

BVDSS = 900V.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max. ) @ VDS = 900V Lower RDS(ON): 0.938Ω (Typ. ) 1 2 3 RDS(ON) = 1.2Ω ID = 10A TO-3P.

📁 SSH10N90A Similar Datasheet

SSH10N60A - advanced power MOSFET (Fairchild)
SSH10N60B - 600V N-Channel MOSFET (Fairchild)
SSH10N70 - N-Channel Power MOSFET (Samsung)
SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)
SSH10N80A - Advanced Power MOSFET (Samsung)
SSH11N90 - N-Channel Power MOSFET (Samsung)
SSH20N50 - (SSH20N45) N-Channel Power MOSFETs (Samsung Electronics)
SSH210 - Surface Mount Schottky Barrier Rectifier (Taiwan Semiconductor)

Other Datasheets by Fairchild Semiconductor

SSH22N50A - Advanced Power MOSFET
SSH25N40A - Advanced Power MOSFET
SSH45N20A - Advanced Power MOSFET
SSH45N20B - 200V N-Channel MOSFET
SSH6N70A - Advanced Power MOSFET
SSH6N90A - Advanced Power MOSFET

Published: Apr 10, 2006 |