SSH10N90A
FEATURES
BVDSS = 900V
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- Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max.) @ VDS = 900V Lower RDS(ON): 0.938Ω (Typ.)
1 2 3
RDS(ON) = 1.2Ω ID = 10A
TO-3P
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC = 25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds y x x z x Value 900 10 6.3 40 ±30 794 10 28 1.5 280 2.22
- 55 to +150
1. Gate 2. Drain 3. Source
Units V A A V m J A m J V/ns W W/°C
°C 300
THERMAL RESISTANCE
Symbol RθJC RθCS RθJA...
