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Fairchild Semiconductor Electronic Components Datasheet

SSH10N90A Datasheet

N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET
FEATURES
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area
• Lower Leakage Current: 25µA (Max.) @ VDS = 900V
• Lower RDS(ON): 0.938(Typ.)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
x
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
THERMAL RESISTANCE
Symbol
RθJC
RθCS
RθJA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
SSH10N90A
BVDSS = 900V
RDS(ON) = 1.2
ID = 10A
TO-3P
1
2
3
1. Gate 2. Drain 3. Source
Value
900
10
6.3
40
±30
794
10
28
1.5
280
2.22
55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
0.24
Max.
0.45
40
Units
°C/W
1999 Fairchild Semiconductor Corporation
REV. B
1


Fairchild Semiconductor Electronic Components Datasheet

SSH10N90A Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

SSH10N90A
N-CHANNEL POWER MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
IDSS Drain-to-Source Leakage Current
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Min.
900
2.0
Typ.
1.11
7.85
2760
245
105
29
54
161
47
127
19.2
56.8
Max.
3.5
100
100
25
250
Units
Test Conditions
V
V/°C
V
nA
µA
VGS=0V, ID=250µA
ID=250µA, See Fig 7
VDS=5V, ID=250µA
VGS=30V
VGS= 30V
VDS=900V
VDS=720V, TC=125°C
1.2 VGS=10V, ID=5A {
3580
290
125
70
20
330
105
165
S VDS=50V, ID=5A
{
VGS=0V, VDS=25V
pF f=1MHz
See Fig 5
VDD=450V, ID=10A
ns RG=9.6
See Fig 13
{|
VDS=720V, VGS=10V
nC ID=10A
See Fig 6 & Fig 12 { |
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
trr
Qrr
Characteristics
Continuous Source Current
Pulsed-Source Current
x
Diode Forward Voltage
{
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
690
11.94
Max.
10
40
1.4
Units
Test Conditions
Integral reverse pn-diode
A
in the MOSFET
V TJ=25°C, IS=10A, VGS=0V
ns TJ=25°C, IF=10A
µC diF/dt=100A/µs
{
Notes:
x Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
y L=15mH, IAS=10A, VDD=50V, RG=27, Starting TJ =25°C
z ISD 10A, di/dt 190A/µs, VDD BVDSS, Starting TJ =25°C
{ Pulse Test: Pulse Width 250µs, Duty Cycle 2%
| Essentially Independent of Operating Temperature
2


Part Number SSH10N90A
Description N-CHANNEL POWER MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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