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SSD2025 - Dual N-CHANNEL POWER MOSFET

Features

  • ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 ▼ ▼ SSD2025 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 Product Summary Part Number SSD2025 BVDSS 60V RDS(on) 0.10Ω ID 3.3A S1 ,S2 N -Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Dr.

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Dual N-CHANNEL POWER MOSFET FEATURES ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 ▼ ▼ SSD2025 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 Product Summary Part Number SSD2025 BVDSS 60V RDS(on) 0.10Ω ID 3.3A S1 ,S2 N -Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA=70℃ ) Operating and Junction Storage Temperature Range ① Value 60 3.3 2.6 10.0 ±20 2.0 1.
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