SGL5N150UF igbt equivalent, igbt.
* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
* High Input Impedance
Application
Switching Power Supply - High Input Voltage O.
Features
* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
* High Input Impedan.
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGL5N150UF is designed for the Switching Power Supply applications.
Features
* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 4.7 .
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